纳米探针系统NP8000

Overview

• This SEM-based probing system is used for analyzing defects and failures that can develop during the manufacturing process of any nanoscale semiconductor devices.

• The NP6800 Nano-Prober employs an optimized cold field-emission electron source, an eight-prober system, a temperature-controlled stage from -40 F to 302 F (-40 deg. to 150 deg.), an AC measurement system (optional) for gate-resistance detection, an EBAC system for short and open failure localization, and probe and specimen exchange units for the highest throughput.

•  The NP6800 Nano-Prober was developed as a dedicated nano-probing system for not only high-throughput operation, but also the high-stability measurements of nano-scale semiconductor devices. The system is capable of evaluating electrical characteristics, EBAC, EBIC, pulse IV, and the temperature requirements of nanoscale devices.

Features
This dedicated nano-probing system was co-developed with a number of semiconductor manufacturing companies for

       • Improved probe stability and current for increased S/N and EBAC performance.

       • Increased electrical image shift to ±75 µm.

       • Eight-probe handling system.

       • Specimen-temperature controllable stage (-40°C to 150°C).

       • CCD camera for both top-down and side views to assist with smoother probing.

       • A high-precision specimen stage for improved positioning accuracy.

       • An in-situ probe exchange system.

       • Electron Beam Absorbed Current (EBAC) function.

       • Voltage-applied EBAC function (Dynamic Induced EBAC "DI-EBAC") (Optional).

       • Pulsed IV measurement for diagnosing resistive gate electrode defects (Optional).